Controlled passivation of GaAs by Se treatment

Autor:	Masaharu Oshima, R. Berrigan, Yoshio Watanabe, T. Scimeca, Fumihiko Maeda
Rok vydání:	1993
Předmět:	chemistry.chemical_classification Physics and Astronomy (miscellaneous) Passivation business.industry Chemistry Mineralogy Synchrotron radiation Substrate (electronics) Band bending Chemical bond X-ray photoelectron spectroscopy Optoelectronics business Inorganic compound Molecular beam epitaxy
Zdroj:	ResearcherID
ISSN:	1077-3118 0003-6951
Popis:	The passivation of GaAs(100) by Se has been achieved in a controlled manner. Results provided by synchrotron radiation photoelectron spectroscopy show that the extent of Se bonding to As and degree of band bending can be systematically controlled by varying the GaAs substrate temperature during Se exposure. Furthermore, the formation of Ga vacancies is also found to depend on substrate temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aea6d082f34a9aa6cdde8b08b87307e https://doi.org/10.1063/1.109607 Zobrazit plný text záznamu