Electrical Stability of Solution-Processed a-IGZO TFTs Exposed to High-Humidity Ambient for Long Periods
| Autor: | Jaewook Jeong, Seung-Un Lee |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Transistor humidity food and beverages Humidity Electrical stability ambient stability Subthreshold slope humanities Electronic Optical and Magnetic Materials Active layer Amorphous solid law.invention a-IGZO thin film transistor Thin-film transistor law Electrode lcsh:Electrical engineering. Electronics. Nuclear engineering Electrical and Electronic Engineering Composite material lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 26-32 (2019) |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2018.2875755 |
| Popis: | The variations in the electrical and mechanical properties of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors exposed to high-humidity ambient conditions for long periods were analyzed. When the TFT was exposed to high-humidity conditions, field-effect mobility severely decreased, while ON/OFF current ratio improved and subthreshold slope value remained nearly constant, which is different from that exposed to low-humidity condition. We found that the H2O molecules induce mechanical peeling of the active layer such that they act as acceptor-like deep states, which is very different from the prior results under low humidity condition. The variations in electrical characteristics were systematically analyzed using a technology-CAD simulation before and after exposure to highhumidity conditions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|