Vertical Electrolyte-Gated Transistors Based on Printed Single-Walled Carbon Nanotubes
| Autor: | Maik Matthiesen, Thomas M. Higgins, Adelaide Kruse, Sebastian Grieger, Maximilian Brohmann, Marcel Rother, Jana Zaumseil |
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| Rok vydání: | 2018 |
| Předmět: |
Nanotube
Materials science business.industry Transistor 02 engineering and technology Carbon nanotube Conductive atomic force microscopy 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Semiconductor law Printed electronics Optoelectronics General Materials Science Nanometre 0210 nano-technology business Electronic circuit |
| Zdroj: | ACS Applied Nano Materials |
| ISSN: | 2574-0970 |
| DOI: | 10.1021/acsanm.8b00756 |
| Popis: | For all-printed circuits, the critical device dimensions, in particular, the channel length in lateral field-effect transistors (FETs), are limited by the printing resolution and alignment accuracy. In contrast, the channel length in vertical electrolyte-gated transistors (VEGTs) is mainly defined by the film thickness and can be easily scaled down to less than 100 nm to achieve high current densities. For practical VEGTs, the printed semiconductor must be highly porous to enable efficient electrolyte-gating by ion penetration. Here, we use aerosol-jet (AJ)-printed layers of polymer-sorted (6,5) single-walled carbon nanotubes with film thicknesses from less than 50 nm to several hundred nanometers as the semiconducting layer sandwiched between evaporated (gold) or printed (silver nanoparticle) metal electrodes and gated by an ionic-liquid-based ion gel. Vertical charge transport in the obtained three-dimensional nanotube networks is confirmed via conductive AFM measurements. The nanotube network VEGTs exh... |
| Databáze: | OpenAIRE |
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