Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology

Autor:	Vincent M. Donnelly, S. Moccio, Martin L. Green, K.H.A. Bogart, J. Sapjeta, T. Sorsch, P. Silvermann, T. Boone, J. Rosamilia, B. E. Weir, C.Y. Kim, G. Timp, K. Evans-Lutterodt, Winston Timp, Frieder H. Baumann
Rok vydání:	2002
Předmět:	Thermal oxidation Materials science Rapid thermal processing MOSFET Surface roughness Analytical chemistry Current density Scaling Stoichiometry Quantum tunnelling
Zdroj:	Scopus-Elsevier
Popis:	We report our assessment of the limitation imposed by the tunneling current density on the scaling of stoichiometric oxides grown by rapid thermal oxidation at 1000/spl deg/C over thicknesses ranging from 0.5-3 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad951607f439a4f215e62400c5aa4b0 https://doi.org/10.1109/vlsit.1998.689265 Zobrazit plný text záznamu