Laser slicing: A thin film lift-off method for GaN-on-GaN technology
| Autor: | V. S. Kogotkov, Andrey Zubrilov, Andrey Leonidov, Yuri Lelikov, Philipp Latyshev, Natalia Bochkareva, Ruslan Gorbunov, Y. G. Shreter, Vladislav Voronenkov |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
FOS: Physical sciences General Physics and Astronomy Applied Physics (physics.app-ph) 02 engineering and technology Electroluminescence Epitaxy 01 natural sciences Slicing law.invention law 0103 physical sciences Wafer Thin film 010302 applied physics Condensed Matter - Materials Science business.industry Materials Science (cond-mat.mtrl-sci) Physics - Applied Physics 021001 nanoscience & nanotechnology Laser Chip lcsh:QC1-999 Femtosecond Optoelectronics 0210 nano-technology business lcsh:Physics |
| Zdroj: | Results in Physics, Vol 13, Iss, Pp-(2019) |
| ISSN: | 2211-3797 |
| DOI: | 10.1016/j.rinp.2019.102233 |
| Popis: | A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 μm and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated. Keywords: Laser slicing, Lift-off, InGaN LED, GaN-on-GaN |
| Databáze: | OpenAIRE |
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