FinFET to nanowire transition at 5nm design rules
| Autor: | Lee Smith, Anne Ziegler, Mathieu Luisier, Munkang Choi, Victor Moroz, Martin Frey |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science Silicon Scattering Nanowire chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics Fin (extended surface) Quantum capacitance Quantum transport chemistry Logic gate 0103 physical sciences Electronic engineering 0210 nano-technology NMOS logic |
| Zdroj: | 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: | 10.1109/sispad.2015.7292307 |
| Popis: | Semi-classical and quantum transport approaches are applied and compared to analyze the relative driving strength of nmos nanowires compared to FinFETs at 5nm design rules. Both transport approaches show better-than-expected nanowire drive current. The reason for this strong performance is explained in terms of electrostatic and subband structure effects. The impact of scattering on the fin to nanowire transition is also examined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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