Polyoxometalate-Based Layered Structures for Charge Transport Control in Molecular Devices
| Autor: | Nikos Glezos, Antonios M. Douvas, Eleni Makarona, Panagiotis Argitis, E. Mielczarski, Jerzy A. Mielczarski |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Macromolecular Substances Surface Properties Static Electricity Molecular Conformation General Physics and Astronomy chemistry.chemical_element Nanotechnology Electron Transport chemistry.chemical_compound X-ray photoelectron spectroscopy Materials Testing Monolayer Computer Simulation General Materials Science Particle Size Fourier transform infrared spectroscopy General Engineering Molecular electronics Equipment Design Tungsten Compounds Nanostructures Equipment Failure Analysis Models Chemical chemistry Percolation Triethoxysilane Polyoxometalate Computer-Aided Design Electronics Crystallization |
| Zdroj: | ACS Nano. 2:733-742 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | Hybrid organic-inorganic films consisted of molecular layers of a Keggin-structure polyoxometalate (POM: 12-tungstophosphoric acid, H(3)PW(12)O(40)) and 1,12-diaminododecane (DD) on 3-aminopropyl triethoxysilane (APTES)-modified silicon surface, fabricated via the layer-by-layer (LBL) self-assembly method are evaluated as molecular materials for electronic devices. The effect of the fabrication process parameters, including primarily compositions of deposition solutions, on the structural characteristics of the POM-based multilayers was studied extensively with a combination of spectroscopic methods (UV, FTIR, and XPS). Well-characterized POM-based films (both single-layers and multilayers) in a controlled and reproducible way were obtained. The conduction mechanisms in single-layered and multilayered structures were elucidated by the electrical characterization of the produced films supported by the appropriate theoretical analysis. Fowler-Nordheim (FN) tunneling and percolation mechanisms were encountered in good correlation with the structural characteristics of the films encouraging further investigation on the use of these materials in electronic and, in particular, in memory devices. |
| Databáze: | OpenAIRE |
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