A Fast Route Towards Freestanding Single-Crystalline Oxide Thin Films by Using YBa2Cu3O7-x as a Sacrificial Layer
Autor: | Yi Chou, Jhih Bang Yi, Ping Chun Wu, Yi-Chia Chou, Yu Chen Liu, Jan Chi Yang, Yao Wen Chang |
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Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
Materials science
Oxide Nanochemistry Pulsed laser deposition Nanotechnology 02 engineering and technology 010402 general chemistry Epitaxy 01 natural sciences chemistry.chemical_compound Freestanding lcsh:TA401-492 General Materials Science Thin film Nano Express business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics YBa2Cu3O7-x sacrificial layer 0104 chemical sciences Semiconductor chemistry Nanoelectronics lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business Layer (electronics) |
Zdroj: | Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020) Nanoscale Research Letters |
Popis: | Researchers have long been seeking multifunctional materials that can be adopted for next-generation nanoelectronics, and which, hopefully, are compatible with current semiconductor processing for further integration. Along this vein, complex oxides have gained numerous attention due to their versatile functionalities. Despite the fact that unbounded potential of complex oxides has been examined over the past years, one of the major challenges lies in the direct integration of these functional oxides onto existing devices or targeted substrates that are inherently incompatible in terms of oxide growth. To fulfill this goal, freestanding processes have been proposed, in which wet etching of inserted sacrificial layers is regarded as one of the most efficient ways to obtain epitaxial high-quality thin films. In this study, we propose using an alternative oxide, YBa2Cu3O7 (YCBO), as a sacrificial layer, which can be easily dissolved in light hydrochloric acid in a more efficient way, while protecting selected complex oxides intact. The high epitaxial quality of the selected complex oxide before and after freestanding process using YBCO as a sacrificial layer is comprehensively studied via a combination of atomic force microscopy, X-ray diffraction, transmission electron microscopy, and electrical transports. This approach enables direct integration of complex oxides with arbitrary substrates and devices and is expected to offer a faster route towards the development of low-dimensional quantum materials. |
Databáze: | OpenAIRE |
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