Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide
| Autor: | Yi Wei, Haiyan Ou, Abebe Tilahun Tarekegne |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Photoluminescence
Materials science Analytical chemistry Thermal ionization 02 engineering and technology 021001 nanoscience & nanotechnology Mass spectrometry 01 natural sciences Fluorescence Acceptor Photon counting Electronic Optical and Magnetic Materials 010309 optics chemistry.chemical_compound chemistry 0103 physical sciences Silicon carbide 0210 nano-technology Recombination |
| Zdroj: | Wei, Y, Tarekegne, A T & Ou, H 2019, ' Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide ', Optical Materials Express, vol. 9, no. 1, pp. 295-303 . https://doi.org/10.1364/OME.9.000295 |
| Popis: | A new boron-induced deeper acceptor level (D*-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The D*-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the D*-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both D*-center and D-center related temperature-dependent DAP recombination. |
| Databáze: | OpenAIRE |
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