Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films
| Autor: | Remi Demoulin, Richard Daubriac, Louis Thuries, Emmanuel Scheid, Fabien Roze, Fuccio Cristiano, Toshiyuki Tabata, Fulvio Mazzamuto |
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| Přispěvatelé: | Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), SCREEN-LASSE |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | IEEE International Interconnect Technology Conference (IITC) 2022 IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩ |
| Popis: | The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technology well addresses this challenge. Particularly UV-LA can reduce resistivity by enlarging metallic grains in lines or thin films, irradiating only the interconnects for short timescales. However, the risk of failure in electrical performance must be correctly managed, and that of UV-LA has not been deeply studied yet. In this work microsecond-scale UV-LA is applied on a stack comparable to an interconnect structure (dielectric/Cu/Ta/SiO2/Si) in either melt or sub-melt regime for grain growth. The failure modes such as (i) Cu diffusion into SiO2, (ii) O incorporation into Cu, and (iii) intermixing between Cu and Ta are investigated. Accepted Paper for the IEEE International Interconnect Technology Conference (IITC) 2022 |
| Databáze: | OpenAIRE |
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