Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes
| Autor: | Klaus Leifer, Joseph Brownless, A. Baset Gholizadeh, Haotian Ling, Aimin Song, Tianbo Duan, Yiming Wang, Richard J. Curry, Hu Li, Jiawei Zhang, Yuanyuan Han, Yangming Fu, Wensi Cai |
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| Rok vydání: | 2021 |
| Předmět: |
Photocurrent
Electron mobility Materials science semiconducting graphene nanoribbons Band gap Graphene business.industry Photoconductivity high mobility Heterojunction Carbon nanotube high on-off ratio longitudinal unzipping law.invention law Optoelectronics General Materials Science photoluminescence business Graphene nanoribbons |
| Zdroj: | Li, H, Zhang, J, Gholizadeh, A B, Brownless, J, Fu, Y, Cai, W, Han, Y, Duan, T, Wang, Y, Ling, H, Leifer, K, Curry, R & Song, A 2021, ' Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping of Single-Walled Carbon Nanotubes ', ACS Applied Materials and Interfaces, vol. 13, no. 44, pp. 52892-52900 . https://doi.org/10.1021/acsami.1c14597 |
| ISSN: | 1944-8252 |
| Popis: | The lack of a sizeable band gap has so far prevented graphene from building effective electronic and optoelectronic devices despite its numerous exceptional properties. Intensive theoretical research reveals that a band gap larger than 1 eV can only be achieved in sub-3 nm wide graphene nanoribbons (GNRs), but real fabrication of such ultranarrow GNRs still remains a critical challenge. Herein, we demonstrate an approach for the synthesis of ultranarrow and photoluminescent semiconducting GNRs by longitudinally unzipping single-walled carbon nanotubes. Atomic force microscopy reveals the unzipping process, and the resulting 2.2 nm wide GNRs are found to emit strong and sharp photoluminescence at ∼685 nm, demonstrating a very desirable semiconducting nature. This band gap of 1.8 eV is further confirmed by follow-up photoconductivity measurements, where a considerable photocurrent is generated, as the excitation wavelength becomes shorter than 700 nm. More importantly, our fabricated GNR field-effect transistors (FETs), by employing the hexagonal boron nitride-encapsulated heterostructure to achieve edge-bonded contacts, demonstrate a high current on/off ratio beyond 105 and carrier mobility of 840 cm2/V s, approaching the theoretical scattering limit in semiconducting GNRs at room temperature. Especially, highly aligned GNR bundles with lengths up to a millimeter are also achieved by prepatterning a template, and the fabricated GNR bundle FETs show a high on/off ratio reaching 105, well-defined saturation currents, and strong light-emitting properties. Therefore, GNRs produced by this method open a door for promising applications in graphene-based electronics and optoelectronics. |
| Databáze: | OpenAIRE |
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