Room-temperature multiferroicity in GaFeO3 thin film grown on (100)Si substrate

Autor:	Sudipta Goswami, Shubhankar Mishra, Kausik Dana, Ashok Kumar Mandal, Nitai Dey, Prabir Pal, Biswarup Satpati, Mrinmay Mukhopadhyay, Chandan Kumar Ghosh, Dipten Bhattacharya
Rok vydání:	2022
Předmět:	Condensed Matter - Materials Science Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Physics and Astronomy
Zdroj:	Web of Science
ISSN:	1089-7550 0021-8979
DOI:	10.1063/5.0123397
Popis:	Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO$_3$ thin films (space group $Pna2_1$), grown on economic and technologically important (100)Si substrates by pulsed laser deposition technique. Structural analysis and comprehensive mapping of Ga:Fe ratio across a length scale range of 10$^4$ reveal coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling - decrease in remanent polarization by $\sim$21\% under $\sim$50 kOe. Magnetic force microscopy reveals presence of both finer ($ 8 pages, 9 figures, accepted for publication in J. Appl. Phys
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69d7fe144939b8c8248b0f2605007a91 https://doi.org/10.1063/5.0123397 Zobrazit plný text záznamu