High structural and optical quality of III-V-on-Si 1.2 nm-thick oxide-bonded hybrid interface
| Autor: | Grégoire Beaudoin, David Alamarguy, Gilles Patriarche, Anne Talneau |
|---|---|
| Přispěvatelé: | Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Nanostructure fabrication Interface (computing) Oxide chemistry.chemical_element Silicon on insulator 02 engineering and technology Integrated optic materials 01 natural sciences [SPI.MAT]Engineering Sciences [physics]/Materials Hybrid devices chemistry.chemical_compound X-ray photoelectron spectroscopy 0103 physical sciences Integrated optoelectronics Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Optical quality Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) chemistry [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2018, 192, pp.25-29. ⟨10.1016/j.mee.2018.02.007⟩ |
| ISSN: | 0167-9317 1873-5568 |
| Popis: | In order to be compatible with CMOS processing, hybrid bonding of III-V materials on Silicon should be operated at 300 °C, which requires an interface layer. The thinnest layer could be obtained when surfaces are prepared oxide-free and activated. We have investigated several activation processes of de-oxidized surfaces and measured their activation efficiency by X-ray Photoelectron Spectroscopy. We report here on the high structural and optical quality of a hybrid III-V on Silicon interface obtained by bonding under vacuum at 300 °C de-oxidized surfaces activated by ozone. The resulting oxide interface layer is 1.2-nm thick the thinnest already reported. Structural characterization of this interface shows no defect in both crystalline lattices. Hybrid shallow ridge waveguides supporting an optical mode overlapping such an interface show 5 cm−1 propagation losses comparable to the value measured for monolithic InP-based waveguides or SOI waveguides produced with the same technology, evidencing the high optical quality of the hybrid interface. Such a thin layer is favorable for an accurate control of the optical performances within hybrid devices and offers a large versatility for their design. |
| Databáze: | OpenAIRE |
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