Recent Progress in the Development of β-Ga2O3 Scintillator Crystals Grown by the Czochralski Method
| Autor: | Zbigniew Galazka, Andrzej J. Wojtowicz, Robert Schewski, Michał Makowski, Winicjusz Drozdowski, Marcin E. Witkowski, Klaus Irmscher |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
scintillation yield
Scintillation Photomultiplier Materials science business.industry Physics::Instrumentation and Detectors Analytical chemistry Scintillator semiconductor Photon counting Electronic Optical and Magnetic Materials Crystal scintillator Semiconductor scintillation time profiles beta-Ga2O3 Yield (chemistry) business Single crystal |
| Popis: | A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators. |
| Databáze: | OpenAIRE |
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