Low-temperature formation of platinum silicides on polycrystalline silicon
| Autor: | Vladimir A. Yuryev, Larisa V. Arapkina, V. M. Senkov, S. A. Mironov, K. V. Chizh, V. P. Dubkov, Igor V. Pirshin, Andrey S. Orekhov |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry FOS: Physical sciences chemistry.chemical_element 02 engineering and technology engineering.material 010402 general chemistry 01 natural sciences Platinum silicide chemistry.chemical_compound Materials Chemistry Condensed Matter - Materials Science Mechanical Engineering Metals and Alloys Materials Science (cond-mat.mtrl-sci) Sputter deposition Atmospheric temperature range 021001 nanoscience & nanotechnology 0104 chemical sciences Amorphous solid Polycrystalline silicon chemistry Mechanics of Materials engineering Crystallite 0210 nano-technology Platinum |
| Zdroj: | Journal of Alloys and Compounds. 843:155908 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2020.155908 |
| Popis: | Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt$_3$Si into Pt$_2$Si occurs as a result of the thermal treatment for 30 minutes in the temperature range from 125 to 300$^{\circ}$C. The Pt$_3$Si and Pt$_2$Si phases crystallize to PtSi due to annealing at the temperatures from 320 to 480$^{\circ}$C for the same time period. Comment: 34 pages, 8 figures, 3 tables |
| Databáze: | OpenAIRE |
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