High electromechanical strain and enhanced temperature characteristics in lead-free (Na,Bi)TiO3–BaTiO3 thin films on Si substrates

Autor:	Kazuya Hashimoto, Eiji Fujii, Shoji Okamoto, Yoshiaki Tanaka, Ryoichi Takayama, Takakiyo Harigai, Hideaki Adachi
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	010302 applied physics Permittivity Multidisciplinary Materials science Piezoelectric coefficient lcsh:R lcsh:Medicine 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology 01 natural sciences Stress (mechanics) Tetragonal crystal system Electron diffraction Electric field 0103 physical sciences lcsh:Q Thin film Composite material 0210 nano-technology lcsh:Science
Zdroj:	Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
ISSN:	2045-2322
DOI:	10.1038/s41598-018-26309-4
Popis:	Here, we demonstrate the high electromechanical strain and enhanced temperature characteristics in the c-axis-oriented lead-free (Na,Bi)TiO3–BaTiO3 (NBT–BT) polycrystalline thin film prepared on Si substrates by rf magnetron sputtering. The effective transverse piezoelectric coefficient, e31*, estimated from the electromechanical strain measured under high electric field, reaches a high level of −12.5 C/m2, and is comparable to those of conventional Pb(Zr,Ti)O3 films. In-situ X-ray diffraction measurement and electron diffraction analysis revealed the electromechanical strain of the NBT–BT film to originate predominantly in elongation of the tetragonal (P4bm) crystal lattice in the c-axis direction. In addition to the large e31*, the NBT–BT film exhibits enhanced permittivity maximum temperature, Tm, of ~400 °C and no depolarization below Tm, as compared to bulk NBT–BT having Tm ≈ 300 °C and a depolarization temperature of ~100 °C. We conclude that the enhancement of temperature characteristics is associated with the distorted P4bm crystal lattice formed by deposition-induced stress and defects. We believe that the present study paves the way for practical applications of lead-free piezoelectric thin films in electromechanical devices.
Databáze:	OpenAIRE
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