Reducing System Power Consumption Using Check-Pointing on Nonvolatile Embedded Magnetic Random Access Memories

Autor: Guillaume Prenat, Christophe Layer, Pierre Paoli, Virgile Javerliac, Bernard Dieny, Gregory Di Pendina, Laurent Becker, Loic Decloedt, Kotb Jabeur, Sylvain Claireux, Stéphane Gros, Fabrice Bernard-Granger
Přispěvatelé: SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), eVaderis
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: ACM Journal on Emerging Technologies in Computing Systems
ACM Journal on Emerging Technologies in Computing Systems, Association for Computing Machinery, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
ACM Journal on Emerging Technologies in Computing Systems, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
ISSN: 1550-4832
1550-4840
DOI: 10.1145/2876507⟩
Popis: International audience; The most widely used embedded memory technology, SRAM (Static Random Access Memory), is heading towards scaling problems in advanced technology nodes, due to the leakage currents caused by the quantum tunneling effect. As an alternative, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) technology shows comparable performances in terms of speed and power consumption, and much better ones in terms of density and leakage. Moreover, MRAM brings up new paradigms in system design thanks to its inherent non-volatility, which allows the definition of new instant on/off policies and leakage current optimization. Based on our compact model, we have developed a fully characterized SoC (System on Chip) from the basis cell up to the system architecture in a 40nm LP hybrid CMOS/magnetic process. Through simulations, we have firstly demonstrated that STT-MRAM is a candidate for the memory part of embedded systems and have secondly implemented a check-pointing methodology based on the regular interrupt routines of a processor to enable a fast power on and off functionality. Using a synthetic benchmark developed in high level programming languages intended to be representative of integer system performance, our method shows that having MRAM instead of SRAM in an embedded design brings up important energy savings. The influence of the check-pointing routine on the power consumption is finally evaluated with regards to various shutdown and restart behaviors.
Databáze: OpenAIRE