Magnetization Reversal in Focussed Ion-Beam Implanted YIG Patterns
| Autor: | Osamu Ishii, I. Hatakeyama, K. Nonaka |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Pattern size
Materials science Ion beam Magnetic energy Field (physics) Acid etching Magnetic domain Condensed matter physics Magnetization reversal Demagnetizing field Nucleation Condensed Matter Physics Electronic Optical and Magnetic Materials Magnetization Magnetic anisotropy Paramagnetism Nuclear magnetic resonance Remanence Electrical and Electronic Engineering Anisotropy Instrumentation Saturation (magnetic) |
| Zdroj: | IEEE Translation Journal on Magnetics in Japan. 4:197-203 |
| ISSN: | 0882-4959 |
| DOI: | 10.1109/tjmj.1989.4563991 |
| Popis: | Magnetization reversal in Bi- and Ga-substituted YIG film rectangular patterns, formed by micro-lapping and subsequent acid etching, is based on the nucleation and extension of reverse domains. As the pattern size is reduced from 300×300 ?m to less than 100×100 ?m, the nucleation field (H n ) increases from 100 to 530 Oe, equal to the anisotropy field. To control the H n , an artificial magnetic defect was formed in the center of the pattern by using focussed ion-beam implantation. When Ge- or Si-ions were implanted at 50 keV in a spot 0.3 ?m in diameter, the H n dropped to less than 330 Oe. As the Ge ion-implanted area was extended, the H n gradually decreased. Assuming that the ion-implanted region is a reverse-domain nucleus, the H m was calculated as the external field for which the maximum total magnetic energy is attained. Theoretical values of H m agreed well with experimental ones. |
| Databáze: | OpenAIRE |
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