Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction
| Autor: | Syed Riaz un Nabi Jafri, Naveed ul Hassan Alvi, Zarreen Tajvar, Omer Nur, Qamar Ul Wahab, Sadia Muniza Faraz |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Photoluminescence Other Electrical Engineering Electronic Engineering Information Engineering Equivalent series resistance heterojunction Scanning electron microscope business.industry Annealing (metallurgy) zno nanorods chemistry.chemical_element ZnO annealing Heterojunction Series resistance ZnO nanorods Oxygen TK1-9971 chemistry Optoelectronics Nanorod zno annealing Annan elektroteknik och elektronik Electrical engineering. Electronics. Nuclear engineering Electrical and Electronic Engineering business series resistance Diode |
| Zdroj: | Elektronika ir Elektrotechnika, Vol 27, Iss 4, Pp 49-54 (2021) |
| ISSN: | 2029-5731 1392-1215 |
| Popis: | The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved. Funding Agencies|Sultan Qaboos Oman IT chair office and Electronic Design Center at the NED University of Engineering and Technology |
| Databáze: | OpenAIRE |
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