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Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Tirupati-517 501, Andhra Pradesh, India Department of Physics, Madanapalle Institute of Technology and Science, Madanapalle-517 325, Andhra Pradesh, India E-mail: nandasvu@gmail.com Department of Physics, JNTU College of Engineering, Anantapuram-515 002, Andhra Pradesh, India Department of Physics, Sri Krishnadevaraya University, Anantapuram-515 003, Andhra Pradesh, India Manuscript received online 23 September 2018, accepted 09 October 2018 In this work, the electrical parameters of Ni/p-Si SBDs have been investigated using I-V and C-V techniques as a function of annealing temperature. The experimental analysis revealed that the SBHs of the Ni/p-Si SDs are 0.53 eV (I-V) and 0.54 eV (Norde) for as-deposited, 0.56 eV (I-V) and 0.58 eV (Norde) for 300ºC, 0.58 eV (I-V) and 0.59 eV (Norde) for 400ºC, and 0.50 eV (I-V) and 0.49 eV (Norde) for 500ºC, respectively. By performing C-V measurements for the Ni/p-Si SBDs, the SBH values were found to be in the range 0.64–0.59 eV for the as-deposited and 500ºC annealed samples, respectively. Further, interface state density (NSS) values of Ni/p-Si SD is estimated and is noticed that the NSS values decreases up to 400ºC annealing temperature and slightly increases after annealing at 500ºC. |
