Frustrated Lewis Pair Chelation as a Vehicle for Low‐Temperature Semiconductor Element and Polymer Deposition
| Autor: | Jonathan G. C. Veinot, Eric Rivard, Alvaro A. Omaña, Yuqiao Zhou, Ryo Kobayashi, Michael J. Ferguson, Rachel K. Green, Alex Brown, Evan R. Antoniuk, Yingjie He, Takeaki Iwamoto |
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| Rok vydání: | 2020 |
| Předmět: |
Carbon group
Materials science Dimethylsilane Silicon Hydride Ligand 010405 organic chemistry chemistry.chemical_element Germanium General Chemistry General Medicine 010402 general chemistry 01 natural sciences Catalysis Frustrated Lewis pair Adduct 0104 chemical sciences Crystallography chemistry.chemical_compound chemistry |
| Zdroj: | Angewandte Chemie. 133:230-233 |
| ISSN: | 1521-3757 0044-8249 |
| Popis: | The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, i Pr2 P(C6 H4 )BCy2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH2 }] and [PB{GeH2 }] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine-borane ligand (PB) after element deposition, and 2) the single-source precursor [PB{SiH2 }] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe2 }] was also prepared, and shown to release poly(dimethylsilane) [SiMe2 ]n upon heating. Overall, this study introduces a "closed loop" deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures. |
| Databáze: | OpenAIRE |
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