RTP annealings for high-quality LPCVD interpolysilicon dielectric layers
| Autor: | Hans Wallinga, Pierre H. Woerlee, J.H. Klootwijk, Marcel H.H. Weusthof, H. van Kranenburg |
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| Rok vydání: | 1998 |
| Předmět: |
business.industry
Chemistry Annealing (metallurgy) Mineralogy Trapping Chemical vapor deposition Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Charge to breakdown METIS-112003 IR-73895 Optoelectronics Electrical and Electronic Engineering Rapid thermal annealing Safety Risk Reliability and Quality business Leakage (electronics) |
| Zdroj: | Microelectronics reliability, 38(38), 277-280. Elsevier |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(97)00047-4 |
| Popis: | Deposited instead of thermally grown oxides were studied to form high-quality interpolysilicon dielectric layers for embedded non-volatile memory application. It was found that by optimizing the texture and morphology of the polysilicon layers and by optimizing the post-dielectric deposition-anneal, very high-quality dielectric layers can be obtained. In this paper it is shown that for deposited interpolysilicon oxides rapid thermal annealing leads to improved electrical characteristics, like high charge to breakdown (Qbd≈20 C/cm2), lower leakage currents and decreased charge trapping during stress, depending on the RTP anneal ambient. Three annealing ambients are compared: N2, O2 and N2O. Annealing in N2O ambient is shown to be superior to the other annealings. |
| Databáze: | OpenAIRE |
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