Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor
Autor: | S. V. Egorov, E. A. Emelyanov, Alexander V. Kononov, M. A. Putyato, B. R. Semyagin, E. V. Deviatov, N.A. Titova, V. V. Preobrazhenskii |
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Rok vydání: | 2017 |
Předmět: |
Physics and Astronomy (miscellaneous)
Field (physics) Niobium FOS: Physical sciences chemistry.chemical_element 02 engineering and technology Electron 01 natural sciences Superconductivity (cond-mat.supr-con) Condensed Matter::Superconductivity Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences 010306 general physics Superconductivity Physics Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Plane (geometry) Condensed Matter - Superconductivity Bilayer Charge (physics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Magnetic field chemistry 0210 nano-technology |
Zdroj: | JETP Letters. 105:508-513 |
ISSN: | 1090-6487 0021-3640 |
Popis: | We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane. Comment: 5 pages |
Databáze: | OpenAIRE |
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