Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

Autor: S. V. Egorov, E. A. Emelyanov, Alexander V. Kononov, M. A. Putyato, B. R. Semyagin, E. V. Deviatov, N.A. Titova, V. V. Preobrazhenskii
Rok vydání: 2017
Předmět:
Zdroj: JETP Letters. 105:508-513
ISSN: 1090-6487
0021-3640
Popis: We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.
Comment: 5 pages
Databáze: OpenAIRE