Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
| Autor: | Chris Palmstrom, Aranya Goswami, Michael Seas, David P. Pappas, Ruichen Zhao, Corey Rae McRae, Anthony P. McFadden |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon General Physics and Astronomy chemistry.chemical_element FOS: Physical sciences 02 engineering and technology Substrate (electronics) Applied Physics (physics.app-ph) Epitaxy 01 natural sciences Etching (microfabrication) 0103 physical sciences 010302 applied physics Condensed Matter - Materials Science business.industry Materials Science (cond-mat.mtrl-sci) Physics - Applied Physics 021001 nanoscience & nanotechnology Semiconductor Electron diffraction chemistry Sapphire Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| DOI: | 10.48550/arxiv.2007.10484 |
| Popis: | Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III–V semiconductor/Al structures are grown by molecular beam epitaxy on III–V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III–V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction. Applications of these structures to the field of quantum information processing are discussed. |
| Databáze: | OpenAIRE |
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