GaN-based power devices: Physics, reliability, and perspectives

Autor: Gaudenzio Meneghesso, Idriss Abid, Carlo De Santi, Giovanni Verzellesi, Alessandro Chini, Marcello Cioni, Luca Nela, Enrico Zanoni, Nicolo Zagni, Riyaz Abdul Khadar, Matteo Meneghini, Farid Medjdoub, Matteo Buffolo, Elison Matioli
Přispěvatelé: Universita degli Studi di Padova, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Università degli Studi di Modena e Reggio Emilia (UNIMORE), Ecole Polytechnique Fédérale de Lausanne (EPFL), Università degli Studi di Padova = University of Padua (Unipd), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE), This activity received funding partially from the ECSEL Joint Undertaking (JU) under Grant Agreement No 826392, UltimateGaN. The JU receives support from the European Union's Horizon 2020 Research and Innovation Programme and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, and Switzerland. This project was co-funded by the Ministry of Education, Universities and Research, in Italy. This activity also received funding partially from the ECSEL Joint Undertaking (JU) through the iRel40 Project. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under Grant Agreement No. 876659. The funding of the project comes from the Horizon 2020 Research Programme and participating countries. National funding was provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. This project was co-funded by the Ministry of Economic Development in Italy. This work has received funding partially from the ECSEL Joint Undertaking (JU) within the YESvGaN Project under Grant Agreement No. 101007229. The JU receives support from the European Union's Horizon 2020 Research and Innovation Programme and Germany, France, Belgium, Austria, Sweden, Spain, and Italy. This project is co-funded by the Ministry of Education, Universities and Research in Italy., PCMP CHOP, Renatech Network, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩
Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩
ISSN: 0021-8979
1089-7550
DOI: 10.1063/5.0061354⟩
Popis: International audience; Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components. The presence of spontaneous and piezoelectric polarization allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable a high-frequency operation, with consequent advantages in terms of miniaturization. For high power/high-voltage operation, vertical device architectures are being proposed and investigated, and three-dimensional structures—fin-shaped, trench-structured, nanowire-based—are demonstrating great potential. Contrary to Si, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This Tutorial describes the physics, technology, and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight into the most relevant aspects gives the reader a comprehensive overview on the present and next-generation GaN electronics.
Databáze: OpenAIRE
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