Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Autor: Merwan Mokhtari, Daniel T. Cassidy, Alain Moréac, Solène Gérard, Marc Fouchier, Christophe Levallois, Brahim Ahammou, Philippe Pagnod-Rossiaux, Erwine Pargon, Jean-Pierre Landesman, François Laruelle
Přispěvatelé: Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), 3SP Technologies, McMaster University [Hamilton, Ontario], Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Université Bretagne Loire (UBL)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Thin Solid Films
Thin Solid Films, Elsevier, 2020, 706, pp.138079. ⟨10.1016/j.tsf.2020.138079⟩
Thin Solid Films, 2020, 706, pp.138079. ⟨10.1016/j.tsf.2020.138079⟩
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2020.138079⟩
Popis: International audience; We measured the details of the strain/stress fields produced in GaAs(100) and InP(100) substrates by the presence of narrow dielectric stripes processed from thin films obtained by plasma-enhanced chemical vapor deposition with a residual and controlled built-in compressive or tensile stress. Micro-photoluminescence techniques were used, measuring either the spectral shift of the luminescence peak or the degree of polarization (DOP) of the spectrally integrated signal. These techniques provide additional information on the different parts of the strain tensor (isotropic and anisotropic). The anisotropic deformation was found to change with the magnitude and sign of the initial builtin stress, and also with the stripe width. Using an analytical model, we were able to determine accurately several physical parameters which describe the stress/strain situation. The localized stress at the edges, expressed within the edge force concept, is shown to follow the expected initial built-in stress and also a stress reduction when the stripe width is decreased. This is interpreted as an evidence of some strain relaxation occuring near the stripe edges. This relaxation also impacts the shape of the DOP curves near the edges. The other important conclusion is the observation that the strain does not return to an isotropic situation (as in the case of an infinite thin film) in the central part of the stripes, even if the widths of these stripes are large (100 µm). The analytical model is developped and explained step by step. This analytical model produces quantitative data that describe the different effects observed. These data can be very helpful in the design and optimization of photonic devices when the photo-elastic effect can be significant, such as waveguides. The µPL measurements coupled with the model can also provide feedback to allow better control of the process conditions of such thin film devices.
Databáze: OpenAIRE
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