Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance
| Autor: | Nesli Yagmurcukardes, Hasan Aydın, Mustafa Can, Yusuf Selamet, Salih Okur, Alper Yanılmaz, Omer Mermer |
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| Přispěvatelé: | Yağmurcukardeş, Nesli, Aydın, Hasan, Yanılmaz, Alper, Selamet, Yusuf, Izmir Institute of Technology. Materials Science and Engineering, Izmir Institute of Technology. Physics, Ege Üniversitesi |
| Rok vydání: | 2016 |
| Předmět: |
Self assembled monolayers
Aromatic compounds Silicon Materials science Barrier heights Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention Isophthalic acid chemistry.chemical_compound law Monolayer Graphene oxide paper Graphene Schottky diode Self-assembled monolayer 021001 nanoscience & nanotechnology 0104 chemical sciences Electronic Optical and Magnetic Materials chemistry Atmospheric pressure 0210 nano-technology Graphene nanoribbons |
| Zdroj: | ECS Journal of Solid State Science and Technology. 5:M69-M73 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0141607jss |
| Popis: | WOS: 000378840000029 Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino] isophthalic acid (MePIFA) and 5-(diphenyl) amino] isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height phi(B) values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively. (C) 2016 The Electrochemical Society. All rights reserved. TUBITAK (The Scientific and Technical Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112T946] This work was supported by TUBITAK (The Scientific and Technical Research Council of Turkey) with project number 112T946. We also thank AQuReC (Applied Quantum Research Center) for Raman measurements. |
| Databáze: | OpenAIRE |
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