Metallic indium segregation control of InN thin films grown on Si(1 0 0) by plasma-enhanced atomic layer deposition
| Autor: | Li Meiling, Huiyun Wei, Mingzeng Peng, Xinhe Zheng, Abdul Rehman, Sanjie Liu, Yingfeng He, Peng Qiu, Yimeng Song, Yunlai An |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Island growth Nitride 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Atomic layer deposition chemistry.chemical_compound Crystallinity chemistry 0103 physical sciences Optoelectronics Crystallite Trimethylindium Thin film 0210 nano-technology business lcsh:Physics Indium |
| Zdroj: | Results in Physics, Vol 12, Iss, Pp 804-809 (2019) |
| ISSN: | 2211-3797 |
| Popis: | InN thin films were grown on Si(1 0 0) substrates by plasma-enhanced atomic layer deposition (PEALD). In this work, It is found that the island growth of InN on Si(1 0 0) easily happens at the initial PEALD period. The PEALD parameters have been systematically investigated to optimize the size, density, coalescence and distribution uniformity of InN grains with good crystallinity and no metallic indium clustering. Especially, indium segregation of PEALD-grown InN has a direct dependence on the deposition temperature (T), the supply of trimethylindium (TMIn) precursor and nitrogen plasma (NP) source. Based on our proposed PEALD mechanism of InN, a polycrystalline hexagonal InN thin film in the thickness of 24.2 nm has been well deposited at the growth per cycle (GPC) of 0.8 Å/cycle. And it shows a (0 0 2) preferential orientation and no any structural phase of metallic indium segregation. As a result, it may provide a useful guide for deeply understanding the PEALD growth mechanism of InN and In-rich nitrides, which further extends the promising applications in high-efficiency photovoltaics and high speed electronic devices. Keywords: InN, PEALD, Indium segregation, Growth mechanism, Polycrystalline |
| Databáze: | OpenAIRE |
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