Optical Properties of Monocrystalline Silicon Nanowires

Autor: A.V. Stronski, P.O. Gentsar, V.F. Onyshchenko, L.A. Karachevtseva
Rok vydání: 2021
Předmět:
Zdroj: Фізика і хімія твердого тіла, Vol 22, Iss 3, Pp 453-459 (2021)
ISSN: 2309-8589
1729-4428
DOI: 10.15330/pcss.22.3.453-459
Popis: The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.
Databáze: OpenAIRE