Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer

Autor:	Biswajit K. Barman, Manas Khatua, Bappaditya Goswami, Ratheesh K. Vijayaraghavan, Subhas Samanta
Rok vydání:	2021
Předmět:	Resistive touchscreen Bistability 010405 organic chemistry business.industry Chemistry Organic Chemistry chemistry.chemical_element General Chemistry 010402 general chemistry 01 natural sciences Biochemistry 0104 chemical sciences Active layer Resistive random-access memory chemistry.chemical_compound Computer data storage Optoelectronics Homoleptic business Cobalt Voltage
Zdroj:	Chemistry – An Asian Journal. 16:1545-1552
ISSN:	1861-471X 1861-4728
DOI:	10.1002/asia.202100152
Popis:	Molecules with bi-stable electronic transport behaviour have been in upfront research topics of the molecular semiconductor devices in the past few decades due to the use of such materials in resistive data storage devices. Transition metal complexes (TMC) are expected to be potential candidates in regard to the tunable and manifold redox behaviour expecting multiple bulk transport states. Finding alternate mechanisms in such devices with TMC as the active layer materials would revoke the multifaceted approach to the functional gain. We have succeeded in demonstrating write once-read many (WORM) type of resistive memory device using a homoleptic Cobalt(II) (Co(II)) complex with large on/off current ratio ensuring the easy readout process at lower voltage. The advantage of this device was the turn on voltage was found to be the low (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67078414d7b0be603795fad76166159f https://doi.org/10.1002/asia.202100152 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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