Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
| Autor: | Jean-Yves Duboz, Sara Martin Horcajo, Ali BenMoussa, Fabrice Semond, Robert Mertens, Joachim John, Peter Verhoeve, Kiki Minoglou, Pawel E. Malinowski, Eric Frayssinet, Marco Esposito, Chris Van Hoof, B. Giordanengo, Piet De Moor |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Extreme ultraviolet lithography 02 engineering and technology Epitaxy 01 natural sciences 7. Clean energy law.invention Optics law 0103 physical sciences 010302 applied physics Telecomunicaciones business.industry Física Schottky diode Semiconductor device 021001 nanoscience & nanotechnology Photodiode Active layer Extreme ultraviolet Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters, ISSN 0003-6951, 2011, Vol. 98, No. 14 Archivo Digital UPM Universidad Politécnica de Madrid |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3576914 |
| Popis: | We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection. |
| Databáze: | OpenAIRE |
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