0.35 μm CMOS OPTICAL SENSOR FOR AN INTEGRATED TRANSIMPEDANCE CIRCUIT
| Autor: | M. Ait aidir, W. Mechti, Hammoudi Escid, Mokhtar Attari |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Transimpedance amplifier
Materials science business.industry lcsh:T SML photodiode Transimpedance CMOS technology lcsh:Technology Integrated photodiode CMOS Control and Systems Engineering lcsh:Technology (General) Optoelectronics lcsh:T1-995 bandwidth enhancement Electrical and Electronic Engineering business shunt and series peaking |
| Zdroj: | International Journal on Smart Sensing and Intelligent Systems, Vol 4, Iss 3 (2011) |
| ISSN: | 1178-5608 |
| Popis: | This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is used for enhancing the bandwidth. The proposed structure operates at a data rate of 10 Gb/s with a BER of Iff20 and was implemented in a 0.35 μm CMOS process. The integrated photodiode has a capacitance of 0.01 pF which permits to the structure to achieve a wide bandwidth (5.75 GHz) with only one inductor before the last stage; hence a smaller silicon area is maintained. The proposed TIA has a gain of36.56 dBΩ (67.57 KΩ), and an input courant noise level of about 25.8 pA/Hz0.5. It consumes a DC power of 87.4 mW from 3.3 V supply voltage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|