Growth process and characterization of magnetic semiconductors based on GeMn alloy films

Autor:	Maurizio Passacantando, Roberto Vittorio Murri, Franco D'Orazio, Nicola Pinto, Franco Lucari, P. Picozzi, L. Morresi
Rok vydání:	2004
Předmět:	Crystallography Hysteresis Reflection high-energy electron diffraction Materials science Kerr effect Electron diffraction Analytical chemistry Curie temperature Crystallite Magnetic semiconductor Grain size
Zdroj:	physica status solidi (c). 1:1748-1751
ISSN:	1610-1634
Popis:	The growth mechanism of thin Ge1−xMnx/Ge(100) diluted magnetic semiconductor films have been studied by reflection high energy electron diffraction (RHEED) technique and correlated to the structural and magnetic properties of the films provided by X-ray diffraction (XRD) and magneto-optical Kerr effect (MOKE), respectively. The RHEED analysis evidenced a transition from a bi-dimensional to a three-dimensional growth mechanism at deposition temperature, TG, lower than 433 K while XRD characterization showed a polycrystalline structure with Ge grain size depending on TG. At low TG (343 K) all the Ge1−xMnx films behaved superparamagnetically, while at TG = 433 K hysteresis loops were observed, with a maximum Curie temperature of ≈250 K, for 0.027 < x < 0.044. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66bd4dc7fcdd8bad15b347b1df1463e9 https://doi.org/10.1002/pssc.200304409 Zobrazit plný text záznamu Plný text