Broadband optical ultrafast reflectivity of Si, Ge and GaAs
| Autor: | Faustino Martelli, J. S. Pelli Cresi, A. Di Cicco, Angela Trapananti, S. Turchini, S. J. Rezvani, Daniele Catone, G. Polzoni, Roberto Gunnella, Marco Minicucci, L. Di Mario |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Ge
Materials science Ultrafast Spectroscopy Science chemistry.chemical_element Germanium 02 engineering and technology Supercontinuum generation 01 natural sciences Fluence Article Gallium arsenide chemistry.chemical_compound Ultrafast photonics 0103 physical sciences Condensed-matter physics Electronic band structure 010302 applied physics Multidisciplinary business.industry Physics GaAs 021001 nanoscience & nanotechnology Supercontinuum Full width at half maximum Wavelength Optics and photonics chemistry Optoelectronics Medicine Si 0210 nano-technology business Ultrashort pulse |
| Zdroj: | Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020) Scientific Reports Scientific reports (Nature Publishing Group) 10 (2020). doi:10.1038/s41598-020-74068-y info:cnr-pdr/source/autori:Di Cicco, A.; Polzoni, G.; Gunnella, R.; Trapananti, A.; Minicucci, M.; Rezvani, S. J.; Catone, D.; Di Mario, L.; Cresi, J. S. Pelli; Turchini, S.; Martelli, F./titolo:Broadband optical ultrafast reflectivity of Si, Ge and GaAs/doi:10.1038%2Fs41598-020-74068-y/rivista:Scientific reports (Nature Publishing Group)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:10 |
| Popis: | Ultrafast optical reflectivity measurements of silicon, germanium, and gallium arsenide have been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs FWHM, $$\lambda $$ λ = 400 nm) as a pump and broadband 340–780 nm ultrafast pulses as a white supercontinuum probe. Measurements have been performed for selected pump fluence conditions below the damage thresholds, that were carefully characterized. The obtained fluence damage thresholds are 30, 20.8, 9.6 mJ/$$\hbox {cm}^2$$ cm 2 for Si, Ge and GaAs respectively. Ultrafast reflectivity patterns show clear differences in the Si, Ge, and GaAs trends both for the wavelength and time dependences. Important changes were observed near the wavelength regions corresponding to the $$E_1$$ E 1 , $$E_1+\Delta $$ E 1 + Δ singularities in the joint density of states, so related to the peculiar band structure of the three systems. For Ge, ultrafast reflectivity spectra were also collected at low temperature (down to 80 K) showing a shift of the characteristic doublet peak around 2.23 eV and a reduction of the recovery times. |
| Databáze: | OpenAIRE |
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