Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C
| Autor: | L. Bouguen, Benoit Jouault, Jean Camassel, Sylvie Contreras, M. Azize, N. Baron, Leszek Konczewicz, Sébastien Chenot, Yvon Cordier |
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| Přispěvatelé: | Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
HEMT STRUCTURE
Materials science Physics and Astronomy (miscellaneous) Silicon Thermal Hall effect chemistry.chemical_element SEMIINSULATING GAN 02 engineering and technology 01 natural sciences 7. Clean energy law.invention HALL SENSORS Condensed Matter::Materials Science law Hall effect 0103 physical sciences TEMPLATES 010302 applied physics Condensed matter physics Liquid helium Wide-bandgap semiconductor Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology chemistry MOCVD [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Field-effect transistor Hall effect sensor 0210 nano-technology SAPPHIRE |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.2838301⟩ |
| Popis: | We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 degrees C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (similar to 600 degrees C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 degrees C, the average value of the thermal drift is only -7 ppm/degrees C. (C) 2008 American Institute of Physics. |
| Databáze: | OpenAIRE |
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