A multi MRad hardened 8 bit/20 MHz flash ADC
| Autor: | C. Delmas, B. Commere, F. Roy, G. Borel, C. Terrier, F. Baille |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Circuit design 8-bit Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Flash ADC Nuclear Energy and Engineering CMOS Total dose Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Radiation hardening Electronic circuit |
| Zdroj: | IEEE Transactions on Nuclear Science. 39:401-404 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.277526 |
| Popis: | An 8-bit, 20-MHz flash ADC (analog-to-digital converter) using a radiation-hardened SOI (silicon on insulator) process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 Mrad (SiO/sub 2/) (10 keV X-rays). Simultaneous use of a rad-hard technology and optimized design in order to withstand the effects of a total dose made it possible to achieve a rad-hard product. > |
| Databáze: | OpenAIRE |
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