| Autor: |
Huang, Qiushi, de Boer, Meint, Barreaux, Jonathan, Paardekooper, Daniel Mathijs, van den Boogaard, Toine, van de Kruijs, Robbert, Zoethout, Erwin, Louis, Eric, Bijkerk, Fred, Wood, Obert R., Panning, Eric M. |
| Přispěvatelé: |
XUV Optics |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
Extreme Ultraviolet (EUV) Lithography V |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.2046415 |
| Popis: |
Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an EUV lithographic imaging system, particularly the ultraviolet (UV) parts of the light (λ=100-400 nm). To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). Both methods have achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect with a minimum loss of EUV light, a new scheme based on surface pyramid structures was developed. An average suppression of more than 10 times was achieved with a relative EUV efficiency of 82.2% by using the Si pyramids structure (compared to a flat multilayer (ML)). Recently, we have successfully produced a pyramid structure consisting of multilayers which greatly improves the relative EUV efficiency to 94.2%. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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