A Low-Loss 1-4 GHz Optically-Controlled Silicon Plasma Switch
Autor: | Dimitrios Peroulis, Alden Fisher, Zach Vander Missen, Abbas Semnani |
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Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
Signal Processing (eess.SP)
Materials science Optical fiber Silicon FOS: Physical sciences chemistry.chemical_element 02 engineering and technology Optical switch Microstrip law.invention 020210 optoelectronics & photonics RF switch law FOS: Electrical engineering electronic engineering information engineering 0202 electrical engineering electronic engineering information engineering Insertion loss Laser power scaling Electrical Engineering and Systems Science - Signal Processing business.industry 020206 networking & telecommunications Physics - Plasma Physics Plasma Physics (physics.plasm-ph) chemistry Return loss Optoelectronics business |
Popis: | This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than 20 dB across the band. The measured OFF-state isolation ranges from 27 dB at 1 GHz to 17 dB at 4 GHz. The switch comprises a single silicon chiplet excited by a 915-nm laser fiber which creates electron-hole pairs, thereby exciting the ON-state silicon plasma. An optical fiber is guided through the bottom of the RF substrate to illuminate the chiplet, which bridges a 1.075-mm microstrip line gap. To the best of our knowledge, this is the lowest-loss silicon plasma switch demonstrated today. 4 pages, 5 figures, to be published in IEEE Wireless and Microwave Technology Conference (WAMICON), 2021 |
Databáze: | OpenAIRE |
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