Recent developments in 130 nm CMOS monolithic active pixel detectors
| Autor: | Lodovico Ratti, A. Lusiani, P. Mereu, J. J. Walsh, Giovanni Verzellesi, G. Giraudo, Nicola Neri, R. Spighi, L. Vitale, V. Speziali, Mauro Dell'Orso, Paola Giannetti, Mauro Villa, Filippo Bosi, C. Andreoli, Valerio Re, G. Giacomini, N. Semprini, G. Calderini, L. Bosisio, F. Forti, Luigi Gaioni, G. Rizzo, S. Bettarini, Gianluca Traversi, Fabio Morsani, Alessandro Gabrielli, Antonio Zoccoli, Marco Bruschi, Massimo Manghisoni, L. Lanceri, E. Paoloni, E. Pozzati, Diego Gamba, G. Marchiori, R. Cenci, Mario Giorgi, B. Giacobbe, G. Batignani, I. Rachevskaia |
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| Rok vydání: | 2007 |
| Předmět: |
Nuclear and High Energy Physics
Engineering Signal processing Pixel business.industry Preamplifier Clock rate Detector ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION Analog signal processing Noise figure Settore ING-INF/01 - Elettronica Atomic and Molecular Physics and Optics CMOS Electronic engineering MAPS Active pixel detectors SLIM5 Optoelectronics business |
| Zdroj: | Nuclear Physics B - Proceedings Supplements. 172:20-24 |
| ISSN: | 0920-5632 |
| DOI: | 10.1016/j.nuclphysbps.2007.07.004 |
| Popis: | We developed monolithic active pixel detectors, by exploiting the triple well option available in a deep-submicron CMOS process. The novel features are the full analog signal processing and digital functionality implemented at the pixel level. The charge collecting element is realized using the deep N-well (DNW), the full in-pixel signal processing chain includes charge preamplifier, shaper, discriminator and latch. We report on the characterization of the two prototype chips, the first (APSEL0) containing single-channel sensors, with different collecting electrode area, and the latter (APSEL1) with several single pixel structures with improved noise figure implementing also an 8 × 8 matrix of 50 × 50 μm 2 pixel area. So far, the pixel matrix has a simple row by row readout, successfully tested with clock frequency up to 30 MHz. The response of the sensors to infra-red laser, β -rays and soft X-rays (from radioactive sources, 90 Sr and 55 Fe respectively) will be presented. The results achieved so far demonstrate the viability of the technology and suggest new design improvements implemented in the next prototype chips submission (APSEL2). |
| Databáze: | OpenAIRE |
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