Electric field control for energy efficient domain wall injection
Autor: | Wen Siang Lew, Hong Xi Liu, Francis Poh, Funan Tan, Sihua Li, Weiliang Gan, Qi Ying Wong |
---|---|
Přispěvatelé: | School of Physical and Mathematical Sciences, GLOBALFOUNDRIES Singapore Pte. Ltd. |
Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Field (physics) Bar (music) business.industry Oersted 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Magnetization Domain wall (magnetism) Electric Field Physics [Science] Electric field 0103 physical sciences Optoelectronics Domain Wall Injection 0210 nano-technology business Current density Stripline |
Zdroj: | Journal of Magnetism and Magnetic Materials. 485:174-179 |
ISSN: | 0304-8853 |
Popis: | Domain wall injection by electric means is an energy exhausting process. This process is conventionally carried out by sending a current pulse through a stripline which generates an Oersted field to locally switch the magnetization in a magnetic wire. In this work, the magnetic properties of the device were modulated by electric control to lower the required current density for DW injection. The proposed DW injection device employs a Hall cross structure which simplifies the device fabrication process and allows a larger Oersted field to be generated at the domain wall injection region. Electrical pulses of 50 ns were sent through the Hall bar to inject domain walls. The formation of the resulting domain walls was detected electrically using the Hall resistance and optically by Kerr microscopy. The results show that the required current density for injection of domain walls is reduced by ∼20% with an applied electric field of +250 MV/m on the Hall cross structure. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) The work was supported by the Singapore National Research Foundation, Prime Minister’s Office under a Competitive Research Programme (Non-volatile Magnetic Logic and Memory Integrated Circuit Devices, NRF-CRP9-2011-01), and an Industry-IHL Partnership Program (NRF2015-IIP001-001). The supports from a RIE2020 ASTAR AME IAF-ICP Grant (No. I1801E0030) and an ASTAR AME Programmatic Grant (No. A1687b0033) is also acknowledged. WSL is a member of the Singapore Spintronics Consortium (SG-SPIN). |
Databáze: | OpenAIRE |
Externí odkaz: |