Unveiling Planar Defects in Hexagonal Group IV Materials
| Autor: | Leo Miglio, Ilaria Zardo, Lin Sun, Marcel A. Verheijen, Jos E. M. Haverkort, Diego de Matteis, Erik P. A. M. Bakkers, Marta De Luca, Alain Dijkstra, Yizhen Ren, Elham M. T. Fadaly, Silvana Botti, Anna Marzegalli, Andrey Sarikov, Riccardo Rurali, Emilio Scalise |
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| Přispěvatelé: | Fadaly, E, Marzegalli, A, Ren, Y, Sun, L, Dijkstra, A, De Matteis, D, Scalise, E, Sarikov, A, De Luca, M, Rurali, R, Zardo, I, Haverkort, J, Botti, S, Miglio, L, Bakkers, E, Verheijen, M, European Commission, European Research Council, Swiss National Science Foundation, Ministerio de Economía, Industria y Competitividad (España), Generalitat de Catalunya, China Scholarship Council, Volkswagen Foundation, German Research Foundation, Leibniz Supercomputing Centre, Advanced Nanomaterials & Devices, EIRES, Plasma & Materials Processing, Atomic scale processing, Optics of hex-SiGe |
| Rok vydání: | 2021 |
| Předmět: |
Hexagonal Si I3 basal stacking fault
defect hexagonal Ge Letter Photoluminescence Materials science Band gap Hexagonal group IV Nanowire Bioengineering hexagonal Si 02 engineering and technology Ibasal stacking fault Crystal Planar Hexagonal Ge General Materials Science Electronic band structure defects hexagonal group IV I 3 basal stacking fault Nanowires business.industry Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics I3 basal stacking fault Optoelectronics Defects Light emission 0210 nano-technology business Stacking fault |
| Zdroj: | Digital.CSIC: Repositorio Institucional del CSIC Consejo Superior de Investigaciones Científicas (CSIC) Nano Letters Digital.CSIC. Repositorio Institucional del CSIC instname Nano Letters, 21(8), 3619-3625. American Chemical Society |
| ISSN: | 1530-6984 |
| DOI: | 10.5451/unibas-ep87563 |
| Popis: | Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present. This project has received funding from the European Union’s Horizon 2020 research and innovation program under Grant agreement no. 735008 (SiLAS). I.Z. acknowledges financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (Grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economía, Industria y Competitividad (MINECO) under Grant FEDER-MAT2017–90024-P, by the Severo Ochoa Centres of Excellence Program under Grant SEV-2015–049,6 and by the Generalitat de Catalunya under Grant no. 2017 SGR 1506. L.S. acknowledges financial support from the China Scholarship Council. S.B. acknowledges funding from the Volkswagen Stiftung (Momentum) through the project “Dandelion” and the DFG through projects SFB-1375 and BO4280/8-1. Computational resources were also provided by the Leibniz Supercomputing Center through projects pr48je and pr62ja. |
| Databáze: | OpenAIRE |
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