Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations
| Autor: | R. Dujardin, Vincent Favre-Nicolin, Pascal Gentile, A. Barski, Thibaut Devillers, V. Poydenot |
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| Přispěvatelé: | Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), gentile, pascal |
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Scanning electron microscope [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics chemistry.chemical_element 02 engineering and technology [SPI.MAT] Engineering Sciences [physics]/Materials 01 natural sciences [SPI.MAT]Engineering Sciences [physics]/Materials law.invention law 0103 physical sciences [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010306 general physics ComputingMilieux_MISCELLANEOUS business.industry Scattering [SPI.NRJ]Engineering Sciences [physics]/Electric power Heterojunction 021001 nanoscience & nanotechnology [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Crystallography chemistry Transmission electron microscopy X-ray crystallography [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Electron microscope 0210 nano-technology business [SPI.NRJ] Engineering Sciences [physics]/Electric power Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2006, 89 (15), pp.153129 Applied Physics Letters, 2006, 89 (15), pp.153129 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2360225 |
| Popis: | Silicon nanowhiskers have been grown by molecular beam epitaxy on Si (111) by vapor-liquid-solid mechanism induced by gold droplets. Very thin Ge containing layers have been incorporated in Si nanowhiskers in order to grow SiGe heterostructures. Si and Ge growth rate in nanowhiskers, shape, and sidewall facets of nanowhiskers have been investigated by scanning electron microscopy and grazing incidence small angle x-ray scattering. Anomalous grazing incidence x-ray diffraction and transmission electron microscopy observations show a strong intermixing of Si with Ge in nanowhiskers and formation of SiGe heterostructures which are highly strained to Si. |
| Databáze: | OpenAIRE |
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