Autor: |
Ben Jones, Jacob Mitchell, Jon Evans, Finn Monaghan, Mike Jennings, Chris Bolton, Kevin Riddel, Huma Ashraf, Owen Guy |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Materials Science Forum. 1062:582-587 |
ISSN: |
1662-9752 |
Popis: |
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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