Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application

Autor: Ben Jones, Jacob Mitchell, Jon Evans, Finn Monaghan, Mike Jennings, Chris Bolton, Kevin Riddel, Huma Ashraf, Owen Guy
Rok vydání: 2022
Předmět:
Zdroj: Materials Science Forum. 1062:582-587
ISSN: 1662-9752
Popis: In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design.
Databáze: OpenAIRE