Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond
| Autor: | Jonas Sichau, Timothy J. Lyon, Robert H. Blick, Amaia Pesquera, August Dorn, Amaia Zurutuza, Alba Centeno |
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| Rok vydání: | 2016 |
| Předmět: |
Condensed Matter - Materials Science
Electron mobility Materials science Condensed Matter - Mesoscale and Nanoscale Physics Physics and Astronomy (miscellaneous) business.industry Annealing (metallurgy) Graphene Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology Quantum Hall effect 021001 nanoscience & nanotechnology Gate voltage 01 natural sciences law.invention Condensed Matter::Materials Science law 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Optoelectronics 010306 general physics 0210 nano-technology business Cvd graphene |
| DOI: | 10.48550/arxiv.1611.06199 |
| Popis: | We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis. Comment: 5 pages, 5 figures. Revision includes updated title, figures updated with extra labels and to be compatible with black and white printing, and various minor edits. Added publication information |
| Databáze: | OpenAIRE |
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