Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Autor: Kuan Wei Lee, Yuan Ming Chen, Yeong-Her Wang, Hsien Cheng Lin
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Materials science
020209 energy
Transconductance
Gate insulator
Liquid phase
inverted-type
02 engineering and technology
High-electron-mobility transistor
Hardware_PERFORMANCEANDRELIABILITY
lcsh:Technology
01 natural sciences
Noise (electronics)
Article
law.invention
law
InAs
0103 physical sciences
0202 electrical engineering
electronic engineering
information engineering
Hardware_INTEGRATEDCIRCUITS
General Materials Science
lcsh:Microscopy
lcsh:QC120-168.85
Surface states
010302 applied physics
high-electron-mobility transistor (HEMT)
lcsh:QH201-278.5
lcsh:T
business.industry
Transistor
lcsh:TA1-2040
metal-oxide-semiconductor (MOS)
Optoelectronics
lcsh:Descriptive and experimental mechanics
lcsh:Electrical engineering. Electronics. Nuclear engineering
lcsh:Engineering (General). Civil engineering (General)
business
lcsh:TK1-9971
Layer (electronics)
Hardware_LOGICDESIGN
Zdroj: Materials
Volume 14
Issue 4
Materials, Vol 14, Iss 970, p 970 (2021)
ISSN: 1996-1944
DOI: 10.3390/ma14040970
Popis: An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.
Databáze: OpenAIRE
Externí odkaz:
Nepřihlášeným uživatelům se plný text nezobrazuje