Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime
Autor: | Jonas Lähnemann, Timur Flissikowski, Uwe Jahn, Lutz Geelhaar, Martin Wölz, Oliver Brandt, Holger T. Grahn |
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Rok vydání: | 2016 |
Předmět: |
Photoluminescence
Materials science Scanning electron microscope Exciton FOS: Physical sciences Bioengineering Cathodoluminescence 02 engineering and technology 01 natural sciences Molecular physics 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Electron beam processing General Materials Science Electrical and Electronic Engineering Surface states 010302 applied physics Condensed Matter - Materials Science Quenching (fluorescence) Condensed Matter - Mesoscale and Nanoscale Physics Mechanical Engineering Materials Science (cond-mat.mtrl-sci) General Chemistry 021001 nanoscience & nanotechnology Mechanics of Materials 0210 nano-technology Luminescence |
Zdroj: | Nanotechnology. 27(45) |
ISSN: | 1361-6528 0957-4484 |
Popis: | Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics. Comment: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/27/45/455706 |
Databáze: | OpenAIRE |
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