Design of composite InAsP/InGaAs quantum wells for a 1.55 μm polarization independent semiconductor optical amplifier

Autor:	Martijn Kemerink, A.Y. Silov, JH Joachim Wolter, Bhp Bas Dorren, Jem Jos Haverkort
Přispěvatelé:	Photonics and Semiconductor Nanophysics, Molecular Materials and Nanosystems, Physics of Semiconductor Nanostructures
Rok vydání:	1999
Předmět:	Optical amplifier Materials science Physics and Astronomy (miscellaneous) Differential gain Band gap business.industry Polarization (waves) Gallium arsenide Semiconductor laser theory chemistry.chemical_compound Wavelength Optics chemistry Optoelectronics business Quantum well
Zdroj:	Applied Physics Letters, 75(18), 2782-2784. American Institute of Physics
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.125148
Popis:	We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64393b6c9fb6faebac20ed9dfd9dfd0c https://doi.org/10.1063/1.125148 Zobrazit plný text záznamu