Wafer-level integration of on-chip antennas and RF passives using high-resistivity polysilicon substrate technology
Autor: | A. Polyakov, S.M. Sinaga, Paulo Mendes, Joachim N. Burghartz, José Higino Correia, M. Bartek |
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Přispěvatelé: | Universidade do Minho |
Jazyk: | angličtina |
Rok vydání: | 2004 |
Předmět: |
Materials science
Silicon Wireless microsystems chemistry.chemical_element 02 engineering and technology Substrate (electronics) engineering.material Wafer level integration 01 natural sciences 7. Clean energy 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Wafer High-κ dielectric 010302 applied physics Wafer-scale integration business.industry Electrical engineering 020206 networking & telecommunications Polycrystalline silicon chemistry Q factor engineering Optoelectronics Radio frequency On-chip antennas business |
Zdroj: | CIÊNCIAVITAE Scopus-Elsevier |
Popis: | High-resistivity polycrystalline silicon (HRPS) wafers are utilized as low-loss substrates for three-dimensional integration of on-chip antennas and RF passive components (e.g. large inductors) in wafer-level chip-scale packages (WLCSP). Sandwiching of HRPS and silicon wafers enables to integrate large RF passives with a spacing of >150 µm to the conductive silicon substrate containing the circuitry, while providing mechanical stability, reducing form factor and avoiding any additional RF loss. Antenna performance comparable to glass substrates and high quality factors for large spiral inductors (Q=11 at 1 GHz; 34 nH) are demonstrated. The HRPS substrates have high dielectric constant, low RF loss, high thermal conductivity, perfect thermal matching, and processing similar to singlecrystalline silicon. Philips Semiconductors and Philips Research in the context of the Philips Associate Centre at DIMES (PACD); Fundação para a Ciência e Tecnologia (FCT) (SFRH/BD/4717/2001, POCTI/ESE/38468/2001, FEDER), and the EC (project Blue Whale IST-2000-10036). |
Databáze: | OpenAIRE |
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