Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

Autor:	Han-Don Um, Keya Zhou, Jung-Ho Lee, Jin-Young Jung, Sang-Won Jee, Kwang-Tae Park, Xiaopeng Li
Rok vydání:	2014
Předmět:	Materials science business.industry Energy conversion efficiency Nanowire law.invention Anti-reflective coating law Solar cell Optoelectronics General Materials Science Quantum efficiency Crystalline silicon business Ohmic contact Common emitter
Zdroj:	Nanoscale. 6:5193-5199
ISSN:	2040-3372 2040-3364
DOI:	10.1039/c4nr00455h
Popis:	Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable ∼40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63f4ed7d141378b7a19b47aa5fdb2c6e https://doi.org/10.1039/c4nr00455h Zobrazit plný text záznamu