Schottky barrier and contact resistance of InSb nanowire field effect transistors
| Autor: | Kimberly A. Dick, Dingxun Fan, N. Kang, Hongqi Xu, Sepideh Gorji Ghalamestani |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Schottky barrier Nanowire FOS: Physical sciences Bioengineering 02 engineering and technology 01 natural sciences law.invention law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences General Materials Science Electrical and Electronic Engineering 010306 general physics Condensed Matter - Mesoscale and Nanoscale Physics business.industry Mechanical Engineering Transistor Contact resistance General Chemistry 021001 nanoscience & nanotechnology Electrical contacts Magnetic field Semiconductor Mechanics of Materials Optoelectronics Field-effect transistor 0210 nano-technology business |
| Popis: | Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height $\Phi_{\rm{SB}}\sim20\ \rm{meV}$ is present at the metal-InSb NW interfaces and its effective height is gate tunable. The contact resistance ($R_{\rm{c}}$) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that $R_{\rm{c}}$ at on-state exhibits a pronounced magnetic field dependent feature, namely it is increased strongly with increasing magnetic field after an onset field $B_{\rm{c}}$. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide a solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW based nanoelectronic devices and quantum devices. Comment: 12 pages, 4 figures |
| Databáze: | OpenAIRE |
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